DXTD882 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor pinning 1 = base 2 = collector 3 = emitter description designed for the output stage of 0.75w audio, voltage regulator, and relay driver. characteristic symbol rating unit collector-base voltage vcbo 40 v collector-emitter voltage vceo 30 v emitter-base voltage vebo 5 v collector current ic 3 a total power dissipation pd 1.5 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) sot-89 dimensions in inches and (millimeters) .063(1.60).055(1.40) .066(1.70).059(1.50) .167(4.25).159(4.05) .016(0.41).014(0.35) .120(3.04) .117(2.96) .181(4.60).173(4.40) .060(1.52).058(1.48) .020(0.51).014(0.36) .102(2.60).095(2.40) 1 2 3 characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 40 - - v ic=100ma, ie=0 collector-emitter breakdown voltage bvceo 30 - - v ic=1ma, ib=0 emitter-base breakdown volatge bvebo 5 - - v ie=10ma, ic=0 collector cutoff current icbo - - 1 ma vcb =30v, ie=0 emitter cutoff current iebo - - 1 ma veb =3v, ib=0 collector-emitter saturation voltage (1) vce(sat) - - 0.5 v ic=2a, ib=0.2a base-emitter saturation voltage (1) vbe(sat) - - 2 v ic=2a, ib=0.2a dc current gain(1) hfe1 30 - - - ic=20ma, vce=2v hfe2 100 - 500 - ic=1a, vce=2v transition frequency ft - 90 - mhz ic=0.1a, vce =5v, f=100mhz output capacitance cob - 45 - pf vcb =10v, f=1mhz, ie=0 electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% rank q p e range 100~200 160~320 250~500 classification of hfe2
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